3-18
RF2317
Rev A19 050822
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current
250
mA
Input RF Power
+18
dBm
Output Load VSWR
20:1
Ambient Operating Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall (50
Ω)
T=+25°C, ICC=180mA, RC=10.2Ω,
50
Ω System
Frequency Range
DC
3000
MHz
3dB Bandwidth
Gain
13.5
14.3
15.0
dB
Noise Figure
4.9
dB
From 100MHz to 1000MHz
Input VSWR
1.7:1
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output VSWR
2.3:1
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output IP3
+47
dBm
At 100MHz
+37
+42
dBm
At 500MHz
+37
dBm
At 900MHz
Output IP2
+55
dBm
F1=400MHz, F2=500MHz, FOUT=100MHz
Output P1dB
+25.5
dBm
At 100MHz
+24
dBm
At 500MHz
+22
dBm
At 900MHz
Reverse Isolation
19.5
dB
Thermal
ThetaJC
55
°C/W
ICC=150mA, PDISS =1.2W, TAMB=85°C
Maximum Junction Temperature
150
°C
Mean Time To Failures
3100
years
TAMB=+85°C
ThetaJC
58
°C/W
ICC=180mA, PDISS =1.5W, TAMB=85°C
Maximum Junction Temperature
175
°C
Mean Time To Failures
380
years
TAMB=+85°C
Power Supply (50
Ω)
Device Voltage
8.5
V
On pin 13, ICC=150mA
9.3
V
On pin 13, ICC=180mA
Operating Current Range
100
180
200
mA
Actual current determined by VCC and RC
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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