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RF2318 数据表(PDF) 4 Page - RF Micro Devices

部件名 RF2318
功能描述  LINEAR BROADBAND AMPLIFIER
PDF  6 Pages
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制造商  RFMD [RF Micro Devices]
网页  http://www.rfmd.com
标志 RFMD - RF Micro Devices

RF2318 数据表(HTML) 4 Page - RF Micro Devices

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Preliminary
3-24
RF2318
Rev A2 010228
3
Application Schematic
Pin
Function
Description
Interface Schematic
1RF IN
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in all
applications. The device has internal feedback, and not using a DC
blocking capacitor will disable the temperature compensation.The bias
of the device can be controlled by this pin. Adding an optional 1k
resistor to ground on this pin reduces the bias level, which may be com-
pensated for by a higher supply voltage to maintain the appropriate
bias level. The net effect of this is an increased output power capability,
as well as higher linearity for signals with high crest factors. DC cou-
pling of the input is not allowed, because this will override the internal
feedback loop and cause temperature instability.
2GND
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance. Each ground pin should
have a via to the ground plane.
3GND
Same as pin 2.
4GND
Same as pin 2.
5GND
Same as pin 2.
6GND
Same as pin 2.
7GND
Same as pin 2.
8RF OUT
RF output and bias pin. Because DC is present on this pin, a DC block-
ing capacitor, suitable for the frequency of operation, should be used in
most applications. For biasing, an RF choke in series with a resistor is
needed. The value for the resistor RC is 30Ω (0.5W) for VCC=9V and
82
Ω for V
CC = 12 V. The DC voltage on this pin is typically 7 V with a cur-
rent of 63mA. In lower power applications the value of RC can be
increased to lower the current and VD on this pin.
RF OUT
RF IN
1
2
3
4
8
7
6
5
220 pF
RF OUT
220 pF
RF IN
3.3
µH
R
C=30 - 82 Ω
V
CC=9-12V
Optional:
R
S=1-2k Ω
Note 1
Note 1:
Optional resistor Rs can be used to maintain the correct bias level at higher supply voltages. This
is useful to increase output capability or linearity for signals with high crest factors.



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