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Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
5
4
RF OUT
VCC
GND
GND
RF IN
RF2323
3V GENERAL PURPOSE AMPLIFIER
• Broadband Gain Blocks
• Low Noise Amplifiers
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Oscillator Loop Amplifiers
• Receiver Front-Ends
The RF2323 is a general purpose, low-cost silicon ampli-
fier designed for operation from a 3V supply. The circuit
configuration with resistive feedback allows for broad-
band cascadable amplification. Capacitive compensation
extends the bandwidth of the amplifier and input stage
design optimizes noise figure. The device is uncondition-
ally stable and internally matched to 50
Ω. The only exter-
nal components required for specified performance are
bypass and DC blocking capacitors (as shown in applica-
tion schematic). The RF2323 is available in a very small
industry-standard SOT-23 5-lead surface mount package,
enabling compact designs which conserve board space.
• DC to >2000MHz Operation
• 2.7V to 3.3V Single Supply
• 2.3dB Noise Figure
•21dB Gain at 900MHz
•12dB Gain at 1900MHz
• High Isolation (33dB at 900MHz)
RF2323
3V General Purpose Amplifier
RF2323 PCBA
Fully Assembled Evaluation Board
4
Rev A4 010720
1
1.60
+0.01
0.400
2.80
+0.20
2.90
+0.10
0.45
+0.10
3° MAX
0° MIN
0.127
0.15
0.05
1.44
1.04
Dimensions in mm.
0.950
Package Style: SOT 5-Lead
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