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Preliminary
4-184
RF2369
Rev A3 010720
4
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +8.0
VDC
Input RF Level
+10
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
TAMB=25°C, VCC=3.0V
Frequency Range
150
824 to 894
2500
MHz
Cellular Low Noise
Amplifier
Frequency
869
894
MHz
HIGH GAIN MODE
Gain Select< 0.8V, VPD/VREF=3V
Gain
14.0
15.5
17.0
dB
Noise Figure
1.6
2.0
dB
Input IP3
9.0
11.5
dBm
Input VSWR
2:1
Output VSWR
2:1
Current Drain
7.5
10.0
mA
BYPASS MODE
Gain Select> 1.8V, VPD/VREF=0V
Gain
-3
-2
-1
dB
Input IP3
+10
+24
dBm
Input VSWR
2:1
Output VSWR
2:1
Current Drain
2.0
4.0
mA
Cellular CDMA Driver
Frequency
824
849
MHz
HIGH GAIN MODE
Gain Select< 0.8V, VPD/VREF=3V
Gain
14.0
15.5
17.0
dB
Noise Figure
2.0
2.5
dB
Output Power
4
dBm
ACPR1
-65
dBc/30kHz
POUT=+4dBm, +885kHz offset
ACPR2
-70
dBc/30kHz
POUT=+4dBm, +1.98MHz offset
Input VSWR
2:1
Output VSWR
2:1
Current Drain
8.5
mA
BYPASS MODE
Gain Select> 1.8V, VPD/VREF=0V
Gain
-3.0
-2.0
-1.0
dB
Input IP3
+10
+24
dBm
Input VSWR
2:1
Output VSWR
2:1
Current Drain
2.0
4.0
mA
Power Supply
Voltage (VCC)3
V
VSELECT Low
0.8
V
High Gain mode.
Select< 0.8V, VPD/VREF=3V
VSELECT High
1.8
V
Low Gain mode.
Select> 1.8V, VPD/VREF=0V
Power Down
0
10
µA
Gain Select< 0.8V, VPD/VREF=0V, VCC=0V
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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