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Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
6
5
4
VCC
GND
RF IN
RF OUT
GND
GC
ATTEN
RF2376
CELLULAR TDMA/CDMA LINEAR
VARIABLE GAIN AMPLIFIER
• CDMA Cellular Handsets
• TDMA Cellular Handsets
The RF2376 is a linear variable gain amplifier suitable for
use in TDMA and CDMA systems in the cellular band.
The features of this device include linear gain control,
high gain, and low noise figure. The IC is manufactured
on an advanced Gallium Arsenide Heterojunction Bipolar
Transistor (GaAs HBT) process and is featured in an
industry-standard miniature 6-lead plastic SOT package.
• 50dB Linear Gain Control Range
•27dB Maximum Gain
• Single 2.7V to 3.3V Supply
• 30mA Supply Current
• High Linearity
• 7dB Noise Figure
RF2376
Cellular TDMA/CDMA Linear Variable Gain Amplifier
RF2376 PCBA
Fully Assembled Evaluation Board
4
Rev A2 010829
.90
.70
.10 MAX
1.30
1.00
3.10
2.70
.37 MIN.
3.00
2.60
1.90
.25
.10
.50
.35
1.80
1.40
9°
*When Pin 1 is in
upper left, text
reads downward
(as shown).
All dimensions in mm.
1°
Package Style: SOT23-6
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