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RF3330PCBA 数据表(PDF) 2 Page - RF Micro Devices

部件名 RF3330PCBA
功能描述  IF GAIN CONTROLLED AMPLIFIER
PDF  10 Pages
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制造商  RFMD [RF Micro Devices]
网页  http://www.rfmd.com
标志 RFMD - RF Micro Devices

RF3330PCBA 数据表(HTML) 2 Page - RF Micro Devices

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Preliminary
3-2
RF3330
Rev A2 010820
3
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
7
V
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-60 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
Typical performance is at TA=+25°C,
VCC=5V.
DC Specifications
Supply Voltage
4.75
5.0
5.25
V
Supply Current
18
25
mA
AGC Control Voltage
0.5
3.3
V
0.5V = Minimum Gain
3.3V =Maximum Gain
AGC Input Impedance
10
M
AC Specifications
3dB Bandwidth
150
MHz
Voltage Gain
Maximum
33.0
34.0
dB
VAGC=3.3V
Minimum
8.0
10.0
dB
VAGC=0.5V
Maximum Input Level
50
dBmV(rms)
While meeting distortion specification
Maximum Output Level
50
dBmV(rms)
While meeting distortion specification
Output 1dB Compression
66
dBmV(rms)
Maximum Gain
Output Harmonic Distortion
-44
-40
dBc
Output level= 50dBmV(rms); VAGC=3.3V
Input IP3, Maximum Gain
45
dBmV(rms)
Output level= 50dBmV(rms); VAGC=3.3V
Input IP3, Minimum Gain
60
dBmV(rms)
Output level= 50dBmV(rms); VAGC=0.5V
Input Noise, Maximum Gain
4.5
nV/rtHz
Input Noise, Minimum Gain
42
nV/rtHz
Output Impedance
10
Differential
Input Impedance
2000
Differential
Output Load Impedance
1
k
Differential
Output Load Capacitance
2
pF
Differential
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).



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