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Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
8
7
6
5
RF IN
RF IN
PC
VCC
RF OUT
RF OUT
RF OUT
RF OUT
BIAS
CIRCUIT
PACKAGE BASE
GND
RF5187
LOW POWER LINEAR AMPLIFIER
• 2.14GHz UMTS Systems
• Digital Communication Systems
• PCS Communication Systems
• Commercial and Consumer Systems
The RF5187 is a highly-linear, low-power amplifier IC. It
has been designed for use as the driver RF amplifier in
applications such as W-CDMA basestations. The RF5187
requires an input and output matching network and power
supply feed line. The device is manufactured on an
advanced Gallium Arsenide HBT process, and is pack-
aged in a 8-pin plastic package with a backside ground.
• Single 3V to 6V Supply
• 10dBm to 20dBm Ultra Linear Output
Power
•14dB Gain at 2.14GHz
• Power Down Mode
• 800MHz to 2500MHz Operation
RF5187
Low Power Linear Amplifier
RF5187 PCBA
Fully Assembled Evaluation Board
2
Rev A1 011016
3.90
±0.10
6.00
±0.20
4.90
±0.10
0.43
±0.05
1.27
1.40
±0.10
0.05
±0.05
-A-
Exposed
Heat Sink
2.70
±0.10
0.22
±0.03
0.60
±0.15
8° MAX
0° MIN
1.70
±0.10
Dimensions in mm.
NOTES:
1. Shaded lead is pin 1.
2. Lead coplanarity - 0.10 with respect to datum "A".
Package Style: SOIC-8 Slug
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