FMN1 / FMP1 / IMN10 / IMN11 / IMP11 /

Diodes

UMN1N / UMP1N / UMN11N / UMP11N

!

!

!

!Absolute maximum ratings

(Ta=25

°C)

∗1 Not to exceed 200mW per element.

∗2 Not to exceed 120mW per element.

Type

(V)

(mA)

Pd (mW)

UMN1N

80

80

80

25

0.25

150

FMP1

UMP1N

80

80

80

25

0.25

150

−55∼+150

IMN10

80

80

300

100

4

150

−55∼+150

80

80

300

100

4

150

−55∼+150

80

80

300

100

4

150

−55∼+150

150/80

150/80

−55∼+150

FMN1

UMN11N

IMN11

UMP11N

IMP11

(V)

(1

µs)

(TOTAL)

(mA)

Isurge

(A)

Peak

reverse

voltage

DC

reverse

voltage

Tj

(˚C)

Tstg

(˚C)

Peak

forward

current

Mean

rectifying

current

Surge

current

Power

dissipation

Junction

temperature

Storage

temperature

!

!

!

!Electrical characteristics

(Ta=25

°C)

Type

Cond.

(V)

Max.

Cond.

Cond.

Max.

Cond.

(pF)

Max.

Max.

(mA)

(V)

(mA)

(V)

f (MHz)

(V)

FMN1

UMN1N

0.9

5

0.1

70

3.5

6

1

4

6

5

FMP1

UMP1N

0.9

5

0.1

70

3.5

6

1

4

6

5

IMN10

1.2

100

0.1

70

3.5

6

1

4

6

5

1.2

100

0.1

70

3.5

6

1

4

6

5

1.2

100

0.1

70

3.5

6

1

4

6

5

(

µA)

UMN11N

IMN11

UMP11N

IMP11

Forward voltage

Reverse recovery time

Reverse current

Capacitance between terminals

!

!

!

!Electrical characteristic curves

(Ta=25

°C)

0

0

125

100

75

50

25

25

50

75

100

125

150

AMBIENT TEMPERATURE : Ta (˚C)

Fig.1 Power reduction curve

0

Ta=25˚C

0.1

0.2

0.5

1

2

5

10

20

50

0.2

0.4

0.6

0.8

1.0

1.2

(V)

Fig. 2 Forward current vs.

forward voltage

(P Type)

0

Ta=100˚C

75˚C

50˚C

25˚C

0˚C

−25˚C

1 000

100

10

1.0

0.1

0.01

10

20

30

40

50

(V)

Fig.3 Reverse current vs.

reverse voltage

(P Type)