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SC2441AEVB 数据表(PDF) 4 Page - Semtech Corporation |
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SC2441AEVB 数据表(HTML) 4 Page - Semtech Corporation |
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4 / 37 page ![]() 4 2006 Semtech Corp. www.semtech.com POWER MANAGEMENT SC2441A Electrical Characteristics (Cont.) r e t e m a r a Pl o b m y Ss n o i t i d n o Cn i Mp y Tx a Ms t i n U t n e r r u C k n i S k a e P e v ir D e t a G e d i S - w o L ) 1 e t o N (2 A e m i T e s i R e v ir D e t a GC L F p 0 0 3 3 =0 3s n e m i T ll a F e v ir D e t a GC L F p 0 0 3 3 =0 3s n e l b a n E d n a f f o t u h S d a o l r e v O , t r a t S - t f o S d a o lr e v O e l b a n E o t e g a tl o V t r a t S - tf o S p u c c i H V , 1 N E S S V 2 N E S S V 1 S S d n aV 2 S S g n i s a e r c n I3 . 3V d l o h s e r h T B F p u c c i H d a o lr e v O V , 1 L O B F V 2 L O B F V 2 , 1 S S V 5 . 3 = B F 1 d n aB F 2 g n i s a e r c e D 5 3 . 08 3 . 01 4 . 0V t n e r r u C e g r a h c s i D t r a t S - tf o S I , ) S I D ( 1 S S I ) S I D ( 2 S S V 1 B F =V 2 B F =V 3 . 0 V 1 S S =V 2 S S =V 3 69 2 1 µA r e tf A t r a t s e R o t e g a tl o V t r a t S - tf o S n w o d t u h S d a o lr e v O V , 1 T S R S S V 2 T S R S S V 1 S S d n aV 2 S S g n i s a e r c e D5 . 0V e g a tl o V N E / S S e l b a s i D l e n n a h C 6 . 0V n o it a r e p O M W P r o f d l o h s e r h T N E / S S V ) + ( 1 S C V = ) - ( 1 S C 0 = V ) + ( 2 S C V = ) - ( 2 S C 0 = 3 2 . 18 2 . 13 3 . 1V r e t r e v n o C t s o o B V N I d l o h s e r h T t r a t SV H T N I V N I g n i s a e r c n I3 7 . 16 7 . 1V V N I s i s e r e t s y HV L T N I 0 0 1V m t n e r r u C s a i B n i P k c a b d e e FI 3 B F 0 40 5 2A n e g a tl o V k c a b d e e FV 3 B F V < V 8 . 1 N I V 5 . 6 1 <5 2 2 . 10 5 2 . 15 7 2 . 1V e c n a t c u d n o c s n a r T r e if il p m A k c a b d e e FG 3 M 0 7 Ω µ 1- n i a G p o o L - n e p O r e if il p m A k c a b d e e Fa 3 o 0 5B d y c n e u q e r F g n i h c ti w S r e t r e v n o C t s o o B f 3 C S O 1z H M e l c y C y t u D h c ti w S m u m i x a MD 3 X A M 5 82 9 % e g a tl o V n o it a r u t a S h c ti w S r e t r e v n o C t s o o BV T A S E C I W S A 6 . 0 =7 2 . 0V t n e r r u C e g a k a e L h c ti w S t s o o BI E G A K A E L V W S V 2 1 =5 µA ti m i L t n e r r u C h c ti w S t s o o BI T I M I L 6 . 08 . 0A n w o d t u h S l a m r e h T 5 5 1C ° s i s e r e t s y H n w o d t u h S l a m r e h T 0 1C ° Notes: (1) Guaranteed by design not tested in production. (2) Input current is dominated by the equivalent gate drive current to external MOSFETs in active switching condition. Unless specified: V IN = 2V, VCC = VBST1 = VBST2 =8V, SYNC/SHDN =2V, ROSC = 51.1kΩ, -40°C < TA = TJ < 105°C |
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