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ADA4891-2ARZ-R7 数据表(PDF) 6 Page - Analog Devices

部件名 ADA4891-2ARZ-R7
功能描述  Low Cost CMOS, High Speed, Rail-to-Rail Amplifiers
PDF  24 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADA4891-2ARZ-R7 数据表(HTML) 6 Page - Analog Devices

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ADA4891-1/ADA4891-2/ADA4891-3/ADA4891-4
Rev. B | Page 6 of
24
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
Supply Voltage
6 V
Input Voltage (Common Mode)
−VS − 0.5 V to +VS
Differential Input Voltage
±VS
Storage Temperature Range
−65°C to +125°C
Operating Temperature Range
−40°C to +125°C
Lead Temperature (Soldering, 10 sec)
300°C
To ensure proper operation, it is necessary to observe the maxi-
mum power derating curves shown in Figure 6. These curves
are derived by setting TJ = 150°C in Equation 1. Figure 6 shows
the maximum safe power dissipation in the package vs. the
ambient temperature on a JEDEC standard 4-layer board.
0
0.5
1.0
2.0
1.5
–55
–35
–15
5
25
45
65
85
105
125
AMBIENT TEMPERATURE (°C)
14-LEAD TSSOP
8-LEAD SOIC_N
14-LEAD SOIC_N
5-LEAD SOT-23
8-LEAD MSOP
TJ = 150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
ADA4891-1/ADA4891-2/ADA4891-3/ADA4891-4 is limited
by the associated rise in junction temperature. The maximum
safe junction temperature for plastic encapsulated devices is
determined by the glass transition temperature of the plastic,
approximately 150°C. Temporarily exceeding this limit can
cause a shift in parametric performance due to a change in the
stresses exerted on the die by the package. Exceeding a junction
temperature of 175°C for an extended period can result in
device failure.
Figure 6. Maximum Power Dissipation vs. Ambient Temperature
Table 4 lists the thermal resistance (θJA) for each ADA4891-1/
ADA4891-2/ADA4891-3/ADA4891-4 package.
Table 4.
Package Type
θJA
Unit
5-Lead SOT-23
146
°C/W
8-Lead SOIC_N
115
°C/W
8-Lead MSOP
133
°C/W
14-Lead SOIC_N
162
°C/W
14-Lead TSSOP
108
°C/W
The still-air thermal properties of the package (θJA), the ambient
temperature (TA), and the total power dissipated in the package
(PD) can be used to determine the junction temperature of the die.
The junction temperature can be calculated as
TJ = TA + (PD × θJA)
(1)
ESD CAUTION
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. It can be calculated by
PD = (VT × IS) + (VS − VOUT) × (VOUT/RL)
(2)
where:
VT is the total supply rail.
IS is the quiescent current.
VS is the positive supply rail.
VOUT is the output of the amplifier.
RL is the output load of the amplifier.



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