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ADR3420ARJZ-R2 数据表(PDF) 19 Page - Analog Devices |
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ADR3420ARJZ-R2 数据表(HTML) 19 Page - Analog Devices |
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19 / 24 page ![]() ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 Rev. B | Page 19 of 24 THEORY OF OPERATION BAND GAP VOLTAGE REFERENCE ENABLE GND FORCE VOUT FORCE VOUT SENSE RFB2 RFB1 VIN VBG GND SENSE Figure 39. Block Diagram The ADR3412/ADR3425/ADR3430/ADR3433/ADR3440/ ADR3450 use a patented voltage reference architecture to achieve high accuracy, low temperature coefficient (TC), and low noise in a CMOS process. Like all band gap references, the references combine two voltages of opposite TCs to create an output voltage that is nearly independent of ambient temper- ature. However, unlike traditional band gap voltage references, the temperature-independent voltage of the references are arranged to be the base-emitter voltage, VBE, of a bipolar transistor at room temperature rather than the VBE extrapolated to 0 K (the VBE of bipolar transistor at 0 K is approximately VG0, the band gap voltage of silicon). A corresponding positive-TC voltage is then added to the VBE voltage to compensate for its negative TC. The key benefit of this technique is that the trimming of the initial accuracy and TC can be performed without interfering with one another, thereby increasing overall accuracy across temperature. Curvature correction techniques further reduce the temperature variation. The band gap voltage (VBG) is then buffered and amplified to produce stable output voltages of 2.5 V and 5.0 V. The output buffer can source up to 10 mA and sink up to −3 mA of load current. The ADR34xx family leverages Analog Devices patented DigiTrim technology to achieve high initial accuracy and low TC, and precision layout techniques lead to very low long-term drift and thermal hysteresis. LONG-TERM STABILITY One of the key parameters of the ADR34xx references is long- term stability. Regardless of output voltage, internal testing during development showed a typical drift of approximately 30 ppm after 1000 hours of continuous, nonloaded operation in a 50°C environment. It is important to understand that long-term stability is not guaranteed by design and that the output from the device may shift beyond the typical 30 ppm specification at any time, especially during the first 200 hours of operation. For systems that require highly stable output voltages over long periods of time, the designer should consider burning in the devices prior to use to minimize the amount of output drift exhibited by the reference over time. See the AN-713 Application Note, The Effect of Long-Term Drift on Voltage References, at www.analog.com for more information regarding the effects of long-term drift and how it can be minimized. POWER DISSIPATION The ADR34xx voltage references are capable of sourcing up to 10 mA of load current at room temperature across the rated input voltage range. However, when used in applications subject to high ambient temperatures, the input voltage and load cur- rent should be carefully monitored to ensure that the device does not exceeded its maximum power dissipation rating. The maximum power dissipation of the device can be calculated via the following equation: ] [W T T P JA A J D θ − = where: PD is the device power dissipation. TJ is the device junction temperature. TA is the ambient temperature. θJA is the package (junction-to-air) thermal resistance. Because of this relationship, acceptable load current in high temperature conditions may be less than the maximum current- sourcing capability of the device. In no case should the part be operated outside of its maximum power rating because doing so can result in premature failure or permanent damage to the device. |
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