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VDD 数据表(PDF) 2 Page - List of Unclassifed Manufacturers

部件名 VDD
功能描述  CMOS
PDF  22 Pages
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制造商  ETC2 [List of Unclassifed Manufacturers]
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标志 ETC2 - List of Unclassifed Manufacturers

VDD 数据表(HTML) 2 Page - List of Unclassifed Manufacturers

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AnaSem Inc.
1
Rev. C09-09
产品规格书
AnaSem
安纳森半导体
.......... Future of the analog world
低电压
, 低功耗, ±1% 高精度电压检测内置延迟电路 CMOS 电压检测器
VDD 系列
概述
VDD系列乃用于低电压范围的低功耗,高检测精度的内置延迟电路电压
检测器
. VDD系列达成的检测精度是以集成电路内以温度系数调整的高准
确率参考电压值来作基准。本集成电路采用最新的
CMOS生产技术和激
光微调技术,与精锐的生产监控。因为内置有延迟电路,延迟检测时间
不需配合外围元件便可以原厂设定之延迟时间范围来选择。
特点
检测电压范围
··································································
工作电压范围
··································································
高精度电压检测
·····················································
电压检测温度特征
··································································
延迟时间选择
·························································································
输出类别
·························································································
低功耗
··································································
工作温度范围
··································································
小型封装
·························································································
应用范围
微型处理器的从设程序
各类系统的开动从设
电池充电检测
各类系统备用电源,电池开关控制
电池寿命检测
延迟电路设计
无卤素
RoHS
符合标准
1.8V~6.0V (selectable with a step of 0.1V)
0.7V~6.0V
±1% (VDET=1.8V~6.0V)
Typ. ±20ppm/°C (VDET=1.8V~6.0V)
S/10~50ms, M/50~200ms, L/80~400ms
CMOS or N-channel open drain
Typ. 0.6µA (VIN=1.5V)
–40°C ~ +85°C
SOT-23 (400mW), SON-4 (400mW)



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