2SD1908

Ordering number : EN3971

CRT Display Horizontal Deflection Output

Applications

NPN Epitaxial Planar Silicon Transistor

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN

11697YK (KOTO) 8-0537 No.3971-1/3

Package Dimensions

unit: mm

2049B-TO-220MF

[2SD1908]

E : Emitter

C : Collector

B : Base

SANYO : TO-220MF

Specifications

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

330

V

Collector-to-Emitter Voltage

VCEO

150

V

Emitter-to-Base Voltage

VEBO

6V

Collector Current

IC

7A

Collector Current (Pulse)

ICP

12

A

Base Current

IB

4A

Collector Dissipation

PC

1.65

W

Tc=25°C

50

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

–55 to +150

°C

Parameter

Symbol

Conditions

Ratings

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=200V, IE=0

100

µA

Emitter Cutoff Current

IEBO

VEB=5V, IC=0

100

mA

DC Current Gain

hFE(1)

VCE=1V, IC=1A

15

hFE(2)

VCE=1V, IC=5A

10

50

Gain-Bandwidth Product

fT

VCE=10V, IC=0.5A

10

40

MHz

C-E Saturation Voltage

VCE(sat)

IC=5A, IB=0.5A

1

V

B-E Saturation Voltage

VBE(sat)

IC=5A, IB=0.5A

1.2

V

C-B Breakdown Voltage

V(BR)CBO

IC=1mA, IE=0

330

V

C-E Breakdown Voltage

V(BR)CEO

IC=1mA, RBE=∞

150

V

E-B Breakdown Voltage

V(BR)EBO

IE=1mA, IC=0

6

V

Fall Time

tf

IC=5A, IB1=–IB2=0.5A

0.5

µs

Features

• Fast switching speed.

• Especially suited for use in high-definition CRT display :

VCC=6 to 12V.

• Wide ASO and highly resistant to breakdown.