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23K256-E/P 数据表(PDF) 3 Page - Microchip Technology

部件名 23K256-E/P
功能描述  256K SPI Bus Low-Power Serial SRAM
PDF  28 Pages
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
标志 MICROCHIP - Microchip Technology

23K256-E/P 数据表(HTML) 3 Page - Microchip Technology

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 2010 Microchip Technology Inc.
DS22100E-page 3
23X256
TABLE 1-2:
AC CHARACTERISTICS
AC CHARACTERISTICS
Industrial (I):
TA = -40°C to +85°C
Automotive (E): TA = -40°C to +125°C
Param.
No.
Sym.
Characteristic
Min.
Max.
Units
Test Conditions
1FCLK
Clock frequency
—
—
—
—
10
16
16
20
MHz
MHz
MHz
MHz
VCC
1.5V (I-Temp)
VCC
1.8V (I-Temp)
VCC
3.0V (E-Temp)
VCC
3.0V (I-Temp)
2TCSS
CS setup time
50
32
32
25
—
—
—
—
ns
ns
ns
ns
VCC
1.5V (I-Temp)
VCC
1.8V (I-Temp)
VCC
3.0V (E-Temp)
VCC
3.0V (I-Temp)
3TCSH
CS hold time
50
50
50
50
—
—
—
—
ns
ns
ns
ns
VCC
1.5V (I-Temp)
VCC
1.8V (I-Temp)
VCC
3.0V (E-Temp)
VCC
3.0V (I-Temp)
4TCSD
CS disable time
50
32
32
25
—
—
—
—
ns
ns
ns
ns
VCC
1.5V (I-Temp)
VCC
1.8V (I-Temp)
VCC
3.0V (E-Temp)
VCC
3.0V (I-Temp)
5
Tsu
Data setup time
10
10
10
10
—
—
—
—
ns
ns
ns
ns
VCC
1.5V (I-Temp)
VCC
1.8V (I-Temp)
VCC
3.0V (E-Temp)
VCC
3.0V (I-Temp)
6THD
Data hold time
10
10
10
10
—
—
—
—
ns
ns
ns
ns
VCC
1.5V (I-Temp)
VCC
1.8V (I-Temp)
VCC
3.0V (E-Temp)
VCC
3.0V (I-Temp)
7TR
CLK rise time
—
2
us
Note 1
8TF
CLK fall time
—
2
us
Note 1
9THI
Clock high time
50
32
32
25
—
—
—
—
ns
ns
ns
ns
VCC
1.5V (I-Temp)
VCC
1.8V (I-Temp)
VCC
3.0V (E-Temp)
VCC
3.0V (I-Temp)
10
TLO
Clock low time
50
32
32
25
—
—
—
—
ns
ns
ns
ns
VCC
1.5V (I-Temp)
VCC
1.8V (I-Temp)
VCC
3.0V (E-Temp)
VCC
3.0V (I-Temp)
11
TCLD
Clock delay time
50
32
32
25
—
—
—
—
ns
ns
ns
ns
VCC
1.5V (I-Temp)
VCC
1.8V (I-Temp)
VCC
3.0V (E-Temp)
VCC
3.0V (I-Temp)
12
TV
Output valid from clock low
—
—
—
—
50
32
32
25
ns
ns
ns
ns
VCC
1.5V (I-Temp)
VCC
1.8V (I-Temp)
VCC
3.0V (E-Temp)
VCC
3.0V (I-Temp)
13
THO
Output hold time
0
—
ns
Note 1
Note 1:
This parameter is periodically sampled and not 100% tested.



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