VBP104FAS datasheet(2/8 Pages) VISHAY

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Document Number: 81169

Rev. 1.1, 20-Apr-10

VBP104FAS, VBP104FASR

Vishay Semiconductors

Silicon PIN Photodiode

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Reverse Dark Current vs. Ambient Temperature

Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 50 mA

11.3

Breakdown voltage

IR = 100 µA, E = 0

V(BR)

Reverse dark current

VR = 10 V, E = 0

Iro

230

Diode capacitance

VR = 0 V, f = 1 MHz, E = 0

VR = 3 V, f = 1 MHz, E = 0

Open circuit voltage

Ee = 1 mW/cm2, λ = 950 nm

350

Temperature coefficient of Vo

Ee = 1 mW/cm2, λ = 950 nm

TKVo

- 2.6

mV/K

Short circuit current

Ee = 1 mW/cm2, λ = 950 nm

µA

Temperature coefficient of Ik

Ee = 1 mW/cm2, λ = 950 nm

TKIk

0.1

%/K

Reverse light current

Ee = 1 mW/cm2, λ = 950 nm,

VR = 5 V

Ira

µA

Angle of half sensitivity

± 65

deg

Wavelength of peak sensitivity

950

Range of spectral bandwidth

0.5

780 to 1050

Noise equivalent power

VR = 10 V, λ = 950 nm

NEP

4 x 10-14

√Hz

Rise time

VR = 10 V, RL = 1 kΩ,

λ = 820 nm

100

Fall time

VR = 10 V, RL = 1 kΩ,

λ = 820 nm

100

1000

100

94 8403

R = 10 V

amb - Ambient Temperature (°C)

0.6

0.8

1.0

1.2

1.4

94 8409

VR =5 V

λ = 950 nm

100

- Ambient Temperature (°C)

amb

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