IRF7YSZ44VCM

2

www.irf.com

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

60

—

—

V

VGS = 0V, ID = 250µA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

0.064

—

V/°C

Reference to 25°C, ID = 250µA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

0.0195

Ω

VGS = 10V, ID = 20A

Resistance

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

17

—

—

S ( )VDS =15V, IDS = 20A ➃

IDSS

Zero Gate Voltage Drain Current

—

—

25

VDS = 60V ,VGS=0V

—

—

250

VDS = 48V,

VGS = 0V, TJ=125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

—

—

50

VGS =10V, ID = 20A

Qgs

Gate-to-Source Charge

—

—

18

nC

VDS = 48V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

25

Turn-On Delay Time

—

—

20

VDD = 30V, ID = 20A,

tr

Rise Time

—

—

120

VGS = 10V, RG = 9.1Ω

Turn-Off Delay Time

—

—

60

tf

Fall Time

—

—

90

LS + LD

Total Inductance

—

6.8

—

Measured from drain lead (6mm/

0.25in. from package ) to source

lead (6mm/0.25in. from pacakge

lCiss

Input Capacitance

—

1730

—

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

375

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

60

—

nA

➃

nH

ns

µA

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

—

—

2.5

°C/W

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ

Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

20*

ISM

Pulse Source Current (Body Diode) ➀

——

80

VSD

Diode Forward Voltage

—

—

1.2

V

trr

Reverse Recovery Time

—

—

105

ns

Tj = 25°C, IF = 20A, di/dt ≤ 100A/µs

QRR

Reverse Recovery Charge

—

—

220

nC

VDD ≤ 25V ➃

ton

A

* Current is limited by package