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LMV641 数据表(PDF) 12 Page - National Semiconductor (TI) |
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LMV641 数据表(HTML) 12 Page - National Semiconductor (TI) |
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12 / 18 page ![]() The values for R S and CF are decided by ensuring that the zero attributed to C F lies at the same frequency as the pole attributed to C L. This ensures that the effect of the second pole on the transfer function is compensated for by the pres- ence of the zero, and that the ROC is maintained at 20 dB/ decade. For the circuit shown in Figure 2 the values of R S and C F are given by Equation 1. Values of RS and CF required for maintaining stability for different values of C L, as well as the phase margins obtained, are shown in Table 1. R F and RIN are 10 k Ω, R L is 2 kΩ, while ROUT is 680Ω. (1) TABLE 1. C L (nF) R S (Ω) C F (pF) Phase Margin (°) 0.5 680 10 17.4 1 680 20 12.4 1.5 680 30 10.1 The LMV641 is capable of driving heavy capacitive loads of up to 1 nF without oscillating, however it is recommended to use compensation should the load exceed 1 nF. Using this methodology will reduce any excessive ringing and help maintain the phase margin for stability. The values of the compensation network tabulated above illustrate the phase margin degradation as a function of the capacitive load. Although this methodology provides circuit stability for any load capacitance, it does so at the price of bandwidth. The closed loop bandwidth of the circuit is now limited by R F and C F. Compensation by External Resistor In some applications it is essential to drive a capacitive load without sacrificing bandwidth. In such a case, in the loop com- pensation is not viable. A simpler scheme for compensation is shown in Figure 3. A resistor, R ISO, is placed in series be- tween the load capacitance and the output. This introduces a zero in the circuit transfer function, which counteracts the ef- fect of the pole formed by the load capacitance, and ensures stability. The value of R ISO to be used should be decided de- pending on the size of C L and the level of performance de- sired. Values ranging from 5 Ω to 50Ω are usually sufficient to ensure stability. A larger value of R ISO will result in a system with less ringing and overshoot, but will also limit the output swing and the short circuit current of the circuit. 20203360 FIGURE 3. Compensation by Isolation Resistor Typical Applications ANISOTROPIC MAGNETORESISTIVE SENSOR The low operating current of the LMV641 makes it a good choice for battery operated applications. Figure 4 shows two LMV641s in a portable application with a magnetic field sen- sor. The LMV641s condition the output from an anisotropic magnetoresistive (AMR) sensor. The sensor is arranged in the form of a Wheatstone bridge. This type of sensor can be used to accurately measure the current (either DC or AC) flowing in a wire by measuring the magnetic flux density, B, emanating from the wire. 20203341 FIGURE 4. A Battery Operated System for Contact-Less Current Sensing Using an Anisotropic Magnetoresistive Sensor www.national.com 12 |
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