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LMV641 数据表(PDF) 12 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
部件名 LMV641
功能描述  10 MHz, 12V, Low Power Amplifier
PDF  18 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

LMV641 数据表(HTML) 12 Page - National Semiconductor (TI)

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The values for R
S and CF are decided by ensuring that the
zero attributed to C
F lies at the same frequency as the pole
attributed to C
L. This ensures that the effect of the second
pole on the transfer function is compensated for by the pres-
ence of the zero, and that the ROC is maintained at 20 dB/
decade. For the circuit shown in Figure 2 the values of R
S and
C
F are given by Equation 1. Values of RS and CF required for
maintaining stability for different values of C
L, as well as the
phase margins obtained, are shown in Table 1. R
F and RIN
are 10 k
Ω, R
L is 2 kΩ, while ROUT is 680Ω.
(1)
TABLE 1.
C
L (nF)
R
S (Ω)
C
F (pF)
Phase Margin (°)
0.5
680
10
17.4
1
680
20
12.4
1.5
680
30
10.1
The LMV641 is capable of driving heavy capacitive loads of
up to 1 nF without oscillating, however it is recommended to
use compensation should the load exceed 1 nF. Using this
methodology will reduce any excessive ringing and help
maintain the phase margin for stability. The values of the
compensation network tabulated above illustrate the phase
margin degradation as a function of the capacitive load.
Although this methodology provides circuit stability for any
load capacitance, it does so at the price of bandwidth. The
closed loop bandwidth of the circuit is now limited by R
F and
C
F.
Compensation by External Resistor
In some applications it is essential to drive a capacitive load
without sacrificing bandwidth. In such a case, in the loop com-
pensation is not viable. A simpler scheme for compensation
is shown in Figure 3. A resistor, R
ISO, is placed in series be-
tween the load capacitance and the output. This introduces a
zero in the circuit transfer function, which counteracts the ef-
fect of the pole formed by the load capacitance, and ensures
stability. The value of R
ISO to be used should be decided de-
pending on the size of C
L and the level of performance de-
sired. Values ranging from 5
Ω to 50Ω are usually sufficient to
ensure stability. A larger value of R
ISO will result in a system
with less ringing and overshoot, but will also limit the output
swing and the short circuit current of the circuit.
20203360
FIGURE 3. Compensation by Isolation Resistor
Typical Applications
ANISOTROPIC MAGNETORESISTIVE SENSOR
The low operating current of the LMV641 makes it a good
choice for battery operated applications. Figure 4 shows two
LMV641s in a portable application with a magnetic field sen-
sor. The LMV641s condition the output from an anisotropic
magnetoresistive (AMR) sensor. The sensor is arranged in
the form of a Wheatstone bridge. This type of sensor can be
used to accurately measure the current (either DC or AC)
flowing in a wire by measuring the magnetic flux density, B,
emanating from the wire.
20203341
FIGURE 4. A Battery Operated System for Contact-Less Current Sensing Using an Anisotropic Magnetoresistive Sensor
www.national.com
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