BAS101_BAS101S_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 14 December 2009

3 of 11

NXP Semiconductors

BAS101; BAS101S

High-voltage switching diodes

5.

Limiting values

[1]

[2]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

repetitive peak reverse

voltage

-300

V

series connection

-

600

V

reverse voltage

-

300

V

series connection

-

600

V

forward current

-

200

mA

series connection

-

100

mA

repetitive peak forward

current

δ≤ 0.25

-1

A

non-repetitive peak forward

current

square wave;

[1] -9

A

Per device

total power dissipation

[2] -250

mW

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per device

thermal resistance from

junction to ambient

in free air

[1] -

-

500

K/W