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© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet

Rev. 01 — 14 December 2004

2 of 12

Philips Semiconductors

BUJ105AD

Silicon diffused power transistor

3.

Ordering information

4.

Limiting values

Table 2:

Ordering information

Type number

Package

Name

Description

Version

BUJ105AD

D-PAK

plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT428

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

peak collector-emitter voltage

-

700

V

collector-emitter voltage

open base

-

400

V

collector-base voltage

open emitter

-

700

V

collector current (DC)

-

8

A

peak collector current

-

16

A

base current (DC)

-

4

A

peak base current

-

8

A

total power dissipation

-80

W

storage temperature

−65

+150

°C

junction temperature

-

150

°C

Fig 1.

Normalized total power dissipation as a function of mounting base temperature

0

160

120

40

80

001aab993

40

80

120

(%)

0

P

()

P

tot

P

tot 25

°C

()

-------------------------

100%

×

=