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STP75NF68 数据表(PDF) 3 Page - STMicroelectronics |
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STP75NF68 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() STP75NF68 Electrical ratings 3/12 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 68 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 80 A ID Drain current (continuous) at TC=100 °C 56 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25 °C 190 W Derating factor 1.27 W/°C dv/dt (2) 2. ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX Peak diode recovery voltage slope 13 V/ns EAS (3) 3. Starting TJ = 25 oC, I D = 40 A, VDD = 34 V Single pulse avalanche energy 700 mJ Tstg Storage temperature -55 to 175 °C TJ Operating junction temperature 175 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.79 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose(1) 1. 1.6mm from case for 10 sec 300 °C |
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