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2SK2625LS 数据表(PDF) 2 Page - Sanyo Semicon Device |
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2SK2625LS 数据表(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page ![]() 2SK2625LS No.7081-2/4 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Input Capacitance Ciss VDS=20V, f=1MHz 700 pF Output Capacitance Coss VDS=20V, f=1MHz 220 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 110 pF Total Gate Charge Qg VDS=200V, ID=5A, VGS=10V 20 nC Turn-ON Delay Time td(on) See specified Test Circuit. 20 ns Rise Time tr See specified Test Circuit. 20 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 50 ns Fall Time tf See specified Test Circuit. 25 ns Diode Forward Voltage VSD IS=5A, VGS=0 0.88 1.2 V Switching Time Test Circuit 0 ID -- VDS IT03649 IT03651 IT03650 IT03652 0 6 3 4 5 2 1 12 4 3 56789 10 1.0 RDS(on) -- VGS 4 4.0 3.5 3.0 2.5 2.0 1.5 6 8 10 12 14 16 18 20 0 ID -- VGS 0 8 6 7 5 4 3 2 1 510 15 20 0.5 RDS(on) -- Tc --50 3.5 3.0 2.5 2.0 1.5 1.0 --25 0 25 50 75 100 125 150 7V 8V 10V 15V VGS=6V VDS=10V 25 °C 75 °C Tc= --25°C Tc=25 °C ID=1A 2.5A 5A Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V Case Temperature, Tc -- °C I D =2.5A, V GS =10V I D =2.5A, V GS =15V PW=1 µs D.C. ≤0.5% P.G RGS=50Ω G S ID=2.5A RL=80.0Ω VDD=200V VOUT VGS=15V D 2SK2625LS |
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