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M95128-RMB3TG/P 数据表(PDF) 42 Page - STMicroelectronics

部件名 M95128-RMB3TG/P
功能描述  128 Kbit serial SPI bus EEPROM with high speed clock
PDF  44 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M95128-RMB3TG/P 数据表(HTML) 42 Page - STMicroelectronics

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Revision history
M95128, M95128-W, M95128-R
42/44
Doc ID 5798 Rev 13
13-Apr-2006
6
New M95128 datasheet extracted from the M95128/256 datasheet. Order
of sections modified.
ECC (error correction code) and Write cycling paragraph added.
Section 3.8: Supply voltage (VCC) added and information removed below
Section 4: Operating features.
Power up state removed below Section 6: Delivery state.
Figure 13: SPI modes supported modified and Note 2 added.
ICC1 specified over the whole VCC range and ICC0 added to Table 13,
Table 14 and Table 15.
ICC specified over the whole VCC range in Table 13.
tCHHL and tCHHH replaced by tCLHL and tCLHH, respectively.
Figure 16: Hold timing modified.
Process letter and Note 1 added to Table 23: Ordering information
scheme.
AC Characteristics (M95128, Device Grade 6)” Table (for 10MHz
frequency) removed.
Note 1 removed from Table 19: AC characteristics (M95128-R).
TA added to Table 6: Absolute maximum ratings.
PDIP8 (BN) and SO8 wide (MW) packages removed. M95128-W and
M95128-R are no longer under development.
Test conditions changed for VOL and VOH in Section Table 14.: DC
characteristics (M95128-W, device grade 3).
27-Jun-2006
7
Figure 12: Bus master and memory devices on the SPI bus modified.
SO8N package specifications updated (see Table 20 and Figure 18).
V Process specified and A Process replaced by P in Table 23: Ordering
information scheme.
04-Oct-2007
8
Section 3.8: Supply voltage (VCC), Section 4.3: Data Protection and
protocol control, Section 5.4: Write Status Register (WRSR), Section 5.6:
Write to Memory Array (WRITE) and Section 5.6.1: ECC (error correction
code) and Write cycling updated.
Note removed below Figure 12: Bus master and memory devices on the
SPI bus, replaced by paragraph.
Test conditions modified for ICC1 and ICC0 in Table 15: DC characteristics
(M95128-R). AC characteristics values added for fC frequency = 10 MHz in
Table 16: AC characteristics (M95128, device grade 3).
tW modified in Table 19: AC characteristics (M95128-R).
Section 10: Package mechanical data:
– UFDFPN8 package added
– Package mechanical inch values calculated from mm and rounded to 4
decimal digits
Table 24: Available M95128x products (package, voltage range,
temperature grade) added.
Blank removed below Plating technology, first note removed, process A
added and process V removed in Table 23: Ordering information scheme.
15-Jan-2008
9
Section 3.7: VSS ground added. Section 3.8.2: Device reset, Section 3.8.4:
Power-down and Section 5.6.1: ECC (error correction code) and Write
cycling modified.
VIL and VIH modified in Table 15: DC characteristics (M95128-R).
Table 24: Available M95128x products (package, voltage range,
temperature grade) updated.
Table 25.
Document revision history (continued)
Date
Revision
Changes



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