STP80NF10 datasheet(3/14 Pages) STMICROELECTRONICS

部件名	STP80NF10

功能描述	N-channel 100 V, 0.012 廓, 80 A, TO-220, D2PAK low gate charge STripFET??II Power MOSFET

PDF	14 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 14 page

STB80NF10, STP80NF10

Electrical ratings

Doc ID 6958 Rev 18

3/14

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

100

VGS

Gate- source voltage

±20

(1)

Limited by package

Drain current (continuous) at TC = 25 °C

(1)

Drain current (continuous) at TC = 100 °C

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

320

PTOT

Total dissipation at TC = 25 °C

300

Derating factor

W/°C

dv/dt (3)

ISD < 80 A, di/dt < 300 A/µs, VDD= 80% V(BR)DSS

Peak diode recovery voltage slope

V/ns

EAS

(4)

Starting Tj = 25 °C, ID = 40 A, VDD = 50 V

Single pulse avalanche energy

350

Tstg

Storage temperature

Operating junction temperature

-55 to 175

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

0.5

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering purpose

300

°C

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