STD3NM60, STD3NM60-1, STP4NM60

Electrical characteristics

Doc ID 8370 Rev 4

5/17

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

1.

Pulse width limited by safe operating area.

Source-drain current

Source-drain current

(pulsed)

-

3

12

A

A

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Forward on voltage

-

1.5

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

(see

Figure 17)

-

224

1

9

ns

nC

A

Reverse recovery time

Reverse recovery charge

Reverse recovery current

(see

Figure 17)

-

296

1.4

9.3

ns

µC

A

Table 8.

1.

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Gate-source breakdown

voltage

30

-

-

V