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RG2Z 数据表(PDF) 1 Page - EIC discrete Semiconductors

部件名 RG2Z
功能描述  ULTRA FAST RECOVERY RECTIFIER DIODES
PDF  2 Pages
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制造商  EIC [EIC discrete Semiconductors]
网页  http://www.eicsemi.com
标志 EIC - EIC discrete Semiconductors

RG2Z 数据表(HTML) 1 Page - EIC discrete Semiconductors

  RG2Z Datasheet HTML 1Page - EIC discrete Semiconductors RG2Z Datasheet HTML 2Page - EIC discrete Semiconductors  
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RG2 - RG2Z
ULTRA FAST RECOVERY
RECTIFIER DIODES
PRV : 200 - 400 Volts
Io : 1.2 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Pb / RoHS Free
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
RG2Z
RG2
UNIT
Maximum Peak Reverse Voltage
VRM
V
Maximum Peak Reverse Surge Voltage
VRSM
V
Maximum Average Forward Current Ta = 60
°C
IF(AV)
A
Maximum Peak Forward Surge Current
(50 Hz, Half-cycle, Sine wave, Single Shot)
Maximum Forward Voltage at IF = 1.5A
VF
V
Maximum Reverse Current at VR = VRM Ta = 25
°C
IR
mA
Maximum Reverse Current at VR = VRM Ta = 100
°C
IR(H)
mA
Maximum Reverse Recovery Time ( Note 1 )
Trr
ns
Junction Temperature Range
TJ
°C
Storage Temperature Range
TSTG
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 100 mA, IRP = 100 mA.
Page 1 of 2
Rev. 03 :September 7, 2005
A
0.5
2.5
RATING
IFSM
50
100
- 40 to + 150
- 40 to + 150
200
400
200
400
1.2
1.5
1.8
0.034 (0.86)
0.028 (0.71)
D2
0.284 (7.21)
0.268 (6.81)
0.161 (4.1)
0.154 (3.9)
1.00 (25.4)
MIN.
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )


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