STP85NF55L datasheet(3/14 Pages) STMICROELECTRONICS

3 / 14 page

STB85NF55L, STP85NF55L

Electrical ratings

Doc ID 8544 Rev 8

3/14

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

VGS

Gate-source voltage

± 15

(1)

Current limited by package

Drain current (continuous) at TC = 25 °C

(1)

Drain current (continuous) at TC=100 °C

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

320

PTOT

Total dissipation at TC = 25 °C

300

Derating factor

2.0

W/°C

dv/dt (3)

ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Peak diode recovery voltage slope

V/ns

EAS

(4)

Starting TJ = 25 °C, ID = 40 A, VDD = 40 V

Single pulse avalanche energy

980

Tstg

Operating junction temperature

Storage temperature

-55 to 175

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

D2PAK

TO-220

Rthj-case Thermal resistance junction-case max.

0.5

°C/W

Rthj-amb Thermal resistance junction-ambient max.

62.5

°C/W

Rthj-pcb Thermal resistance junction-pcb max.

(1)

When mounted on 1inch² FR-4 2Oz Cu board

°C/W

Maximum lead temperature for soldering purpose

300

°C

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