STB9NK90Z datasheet(3/17 Pages) STMICROELECTRONICS

3 / 17 page

STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z

Electrical ratings

Doc ID 9479 Rev 7

3/17

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220, D²PAK

TO-247

TO-220FP

VDS

Drain-source voltage (VGS = 0)

900

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25 °C

8(1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC=100 °C

5(1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

32(1)

PTOT

Total dissipation at TC = 25 °C

160

Derating Factor

1.28

0.32

W/°C

Vesd(G-S)

G-S ESD (HBM C=100 pF, R=1.5 k

Ω)

4KV

dv/dt(3)

ISD ≤ 10 A, di/dt ≤ 200 A/µs,VDD ≤ V(BR)DSS, Tj ≤ TJmax.

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1s;TC=25°C)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220

D²PAK

TO-220FP TO-247

Rthj-case

Thermal resistance junction-case max

0.78

3.1

0.78

°C/W

Rthj-a

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max.)

EAS

Single pulse avalanche energy (starting Tj=25 °C,

ID= IAR, VDD= 50 V) (see Figure 22)(see Figure 23)

300

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