STP7NK30Z datasheet(2/15 Pages) STMICROELECTRONICS

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Electrical ratings

STx7NK30Z

2/15

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220, DPAK

TO-220FP

VDS

Drain-source voltage (VGS = 0)

300

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25 °C

5 (1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC = 100 °C

3.2

3.2 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

20 (1)

PTOT

Total dissipation at TC = 25 °C

Derating factor

0.4

0.16

W/°C

VESD(G-S)

Gate source ESD(HBM-C=100 pF,

R=1.5 k

Ω)

2800

dv/dt (3)

ISD ≤ 5.7 A, di/dt ≤ 200 A/µs, VDD =80% V(BR)DSS.

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1 s;TC=25 °C)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 150

Table 3.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220, DPAK

TO-220FP

Rthj-case

Thermal resistance junction-case Max

2.50

6.25

Rthj-amb

Thermal resistance junction-ambient Max

62.5

Maximum lead temperature for soldering

purpose

300

Table 4.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

130

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