STP3NK80Z datasheet(3/18 Pages) STMICROELECTRONICS

部件名	STP3NK80Z

功能描述	N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH™Power MOSFET

PDF	18 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 18 page

STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z

Electrical ratings

Doc ID 9565 Rev 6

3/18

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220, DPAK

IPAK

TO-220FP

VDS

Drain-source voltage (VGS = 0)

800

VDGR

Drain-gate voltage (RGS = 20 kΩ)800

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25 °C

2.5

2.5 (1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC=100 °C

1.57

1.57 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

10 (1)

PTOT

Total dissipation at TC = 25 °C

Derating factor

0.56

0.2

W/°C

VESD(G-S)

Gate source ESD

(HBM-C=100 pF, R=1.5 k

Ω)

2000

dv/dt (3)

ISD ≤ 2.5 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (DC)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220

TO-220FP

DPAK

IPAK

Rthj-case Thermal resistance junction-case max

1.78

°C/W

Rthj-a

Thermal resistance junction-ambient max

62.5

100

°C/W

Maximum lead temperature for soldering

purpose

300

°C

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