STP2NK90Z datasheet(3/18 Pages) STMICROELECTRONICS

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STP2NK90Z - STD2NK90Z - STD2NK90Z-1

Electrical ratings

3/18

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

STP2NK90Z

STD2NK90Z

STD2NK90Z-1

VDS

Drain-source voltage (VGS = 0)

900

VDGR

Drain-gate voltage (RGS = 20 kΩ)900

VGS

Gate- source Voltage

± 30

Drain current (continuous) at TC = 25°C

2.1

Drain current (continuous) at TC = 100°C

1.3

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

8.4

PTOT

Total dissipation at TC = 25°C

Derating factor

0.56

W/°C

VESD(G-S)

Gate source ESD(HBM-C=100pF,

R=1.5K

Ω)

2000

dv/dt (2)

ISD ≤2.1A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.

Peak diode recovery voltage slope

4.5

V/ns

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

1.78

°C/W

Rthj-amb

Thermal resistance junction-ambient max

Maximum lead temperature for soldering purpose

62.5

300

°C/W

°C

Table 3.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

2.1

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

150

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