Wuxi NCE Power Semiconductor Co., Ltd

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MBR20100CT

Pb-Free Product

NCE MOS Barrier Rectifier

Description

This Schottky rectifier has been optimized for low reverse leakage at

high temperature, this product special design for high forward and

reverse surge capability

General Features

●

100V

●

2 x 10 A

●

High frequency operation

●

Low forward voltage drop

●

Center tap package

●

Lead free product is acquired

●

High Junction Temperature

●

High ESD Protection, IEC Model ±10KV

●

High Forward & Reverse Surge capability

Application

●

Power Supply − Output Rectification

●

Power Management

●

Instrumentation

Schematic diagram

Marking and pin Assignment

TO-220 top view

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

MBR20100CT

MBR20100CT

TO-220

Absolute Maximum Ratings (TA=25℃ unless otherwise noted)

Parameter

Symbol

Limit

Unit

Peak Repetitive Reverse Voltage

VRRM

100

V

Per diode

10

A

Average Forward Current

Per device

IF(AV)

20

A

Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)

IFSM

180

A

Peak Repetitive Reverse Surge Current(Tp=2us)

IRRM

0.5

A

Maximum operation Junction Temperature Range

TJ

-50~150

℃

Storage Temperature Range

Tstg

-50~150

℃