STF12NK60Z datasheet(4/15 Pages) STMICROELECTRONICS

4 / 15 page

Electrical characteristics

STP12NK60Z, STF12NK60Z, STW12NK60Z

4/15

Doc ID 11324 Rev 7

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

On/off

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

600

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

3.75

4.5

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 5 A

0.53

0.64

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs

(1)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward transconductance

VDS=10 V, ID = 5 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

1740

195

Coss eq.

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 480 V

101

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 300 V, ID = 5 A,

RG=4.7 Ω

VGS = 10 V

(see Figure 19)

22.5

18.5

31.5

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 480 V, ID = 10 A,

VGS = 10 V

(see Figure 20)

STF12NK60Z 数据表(PDF) 4 Page - STMicroelectronics

STF12NK60Z 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

数据表下载