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STGD10NC60KDT4 数据表(PDF) 3 Page - STMicroelectronics |
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STGD10NC60KDT4 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 20 page ![]() STGx10NC60KD Electrical ratings Doc ID 11423 Rev 6 3/20 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit D²PAK TO-220 DPAK TO-220FP VCES Collector-emitter voltage (VGE = 0) 600 V IC (1) Continuous collector current at TC = 25°C 20 9 A IC (1) Continuous collector current at TC = 100°C 10 6 A ICL (2) Turn-off latching current 30 A ICP (3) Pulsed collector current 30 A VGE Gate-emitter voltage ±20 V IF Diode RMS forward current at Tc=25°C 10 A IFSM Surge non repetitive forward current Tp = 10 ms sinusoidal 20 A PTOT Total dissipation at TC = 25°C 65 62 25 W VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) -- 2500 V tscw Short-circuit withstand time VCE = 0.5 VCES, Tj = 125 °C, RG = 10 Ω, VGE = 12 V 10 µs Tstg Storage temperature – 55 to 150 °C Tj Operating junction temperature 1. Calculated according to the iterative formula 2. Vclamp = 80 % VCES, VGE = 15 V, RG = 10 Ω, TJ = 150 °C 3. Pulse width limited by maximum junction temperature and turn-off within RBSOA I C TC () T jmax () TC – R thj c – V CE sat () max () Tjmax () IC TC () , () × ---------------------------------------------------------------------------------------------------------- = |
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