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STGD10NC60KDT4 数据表(PDF) 3 Page - STMicroelectronics

部件名 STGD10NC60KDT4
功能描述  10 A, 600 V short-circuit rugged IGBT
PDF  20 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGD10NC60KDT4 数据表(HTML) 3 Page - STMicroelectronics

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STGx10NC60KD
Electrical ratings
Doc ID 11423 Rev 6
3/20
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
D²PAK
TO-220
DPAK
TO-220FP
VCES
Collector-emitter voltage (VGE = 0)
600
V
IC
(1)
Continuous collector current at TC = 25°C
20
9
A
IC
(1)
Continuous collector current at TC = 100°C
10
6
A
ICL
(2)
Turn-off latching current
30
A
ICP
(3)
Pulsed collector current
30
A
VGE
Gate-emitter voltage
±20
V
IF
Diode RMS forward current at Tc=25°C
10
A
IFSM
Surge non repetitive forward current Tp = 10 ms
sinusoidal
20
A
PTOT
Total dissipation at TC = 25°C
65
62
25
W
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1s;TC=25°C)
--
2500
V
tscw
Short-circuit withstand time
VCE = 0.5 VCES, Tj = 125 °C, RG = 10 Ω, VGE = 12 V
10
µs
Tstg
Storage temperature
– 55 to 150
°C
Tj
Operating junction temperature
1.
Calculated according to the iterative formula
2.
Vclamp = 80 % VCES, VGE = 15 V, RG = 10 Ω, TJ = 150 °C
3.
Pulse width limited by maximum junction temperature and turn-off within RBSOA
I
C TC
()
T
jmax
() TC
R
thj
c
V
CE sat
() max
() Tjmax
() IC TC
()
,
()
×
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=



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