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PD57030STR-E 数据表(PDF) 1 Page - STMicroelectronics |
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PD57030STR-E 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 18 page ![]() May 2010 Doc ID 12613 Rev 2 1/18 18 PD57030-E PD57030S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) Figure 1. Pin connection PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Gate Source Drain Table 1. Device summary Order code Package Packing PD57030-E PowerSO-10RF (formed lead) Tube PD57030S-E PowerSO-10RF (straight lead) Tube PD57030TR-E PowerSO-10RF (formed lead) Tape and reel PD57030STR-E PowerSO-10RF (straight lead) Tape and reel www.st.com |
类似零件编号 - PD57030STR-E |
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类似说明 - PD57030STR-E |
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