STP3N150 datasheet(4/15 Pages) STMICROELECTRONICS

4 / 15 page

Electrical characteristics

STFW3N150, STP3N150, STW3N150

4/15

Doc ID 13102 Rev 9

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

1500

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

500

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 30 V

± 100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on

Static drain-source on

resistance

VGS = 10 V, ID = 1.3 A

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward

transconductance

VDS = 30 V, ID = 1.3 A

2.6

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz, VGS = 0

939

102

13.2

Coss eq.

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VDS=0 to 1200 V, VGS = 0

100

Gate input resistance

f=1 MHz Gate DC Bias=0

Test signal level=20 mV

open drain

-4

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 1200 V, ID = 2.5 A,

VGS = 10 V

(see Figure 19)

29.3

4.6

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