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STF8NM60N 数据表(PDF) 5 Page - STMicroelectronics

部件名 STF8NM60N
功能描述  N-channel 600 V, 0.56 Ω,7 A MDmesh™II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
PDF  19 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STF8NM60N 数据表(HTML) 5 Page - STMicroelectronics

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STx8NM60N
Electrical characteristics
5/19
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 3.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18),
(see Figure 23)
10
12
40
10
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
7
28
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD = 7 A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, di/dt = 100
A/µs, VDD = 30 V, Tj = 25
°C
(see Figure 20)
310
2.40
15
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7A, di/dt = 100
A/µs, VDD = 30 V,
Tj=150°C
(see Figure 20)
480
3.50
15
ns
µC
A



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