STF3NK100Z datasheet(3/16 Pages) STMICROELECTRONICS

3 / 16 page

STF3NK100Z - STP3NK100Z - STD3NK100Z

Electrical ratings

3/16

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220/DPAK TO-220FP

VDS

Drain-source voltage (VGS = 0)

1000

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25°C

2.5

2.5 (1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC = 100°C

1.57

1.57(2)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

10 (2)

PTOT

Total dissipation at TC = 25°C

Derating factor

0.72

0.2

W/°C

VESD(G-S)

Gate source ESD (HBM-C=100pF, R=1.5K

Ω)

3000

dv/dt (3)

ISD ≤ 2.5A, di/dt ≤ 200A/µs, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t=1s;TC=25°C)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220/DPAK TO-220FP

Rthj-case

Thermal resistance junction-case max

1.39

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.5

°C/W

Maximum lead temperature for soldering purpose

300

Table 4.

Avalanche data

Symbol

Parameter

Value

Unit

IAR

(1)

Pulse width limited by Tjmax

Avalanche current, repetitive or not-repetitive

2.5

EAS

(2)

Starting Tj = 25°C, ID = IAR, VDD = 50V

Single pulse avalanche energy

110

STF3NK100Z 数据表(PDF) 3 Page - STMicroelectronics

STF3NK100Z 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

数据表下载

链接网址

STF3NK100Z 数据表(PDF) 3 Page - STMicroelectronics

STF3NK100Z 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

数据表 下载

链接网址

数据表下载