BCW65CLT1G. datasheet(2/3 Pages) ONSEMI

2 / 3 page

BCW65ALT1G, BCW65CLT1G

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

V(BR)CEO

−

Vdc

Collector−Emitter Breakdown Voltage

(IC = 10 mAdc, VEB = 0)

V(BR)CES

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

5.0

−

Vdc

Collector Cutoff Current

(VCE = 32 Vdc, IE = 0)

(VCE = 32 Vdc, IE = 0, TA = 150°C)

ICES

−

nAdc

mAdc

Emitter Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

IEBO

−

nAdc

ON CHARACTERISTICS

DC Current Gain

BCW65ALT1

(IC = 100 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 2.0 Vdc)

hFE

100

−

250

−

DC Current Gain

BCW65CLT1

(IC = 100 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 2.0 Vdc)

hFE

180

250

100

−

630

−

Collector−Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 100 mAdc, IB = 10 mAdc)

VCE(sat)

−

0.7

0.3

−

Vdc

Base −Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat)

−

2.0

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain — Bandwidth Product

(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)

100

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

−

Noise Figure

(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)

−

SWITCHING CHARACTERISTICS

Turn−On Time

(IB1 = IB2 = 15 mAdc)

ton

−

100

Turn−Off Time

(IC = 150 mAdc, RL = 150 W)

toff

−

400

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