STD90N4F3 datasheet(4/16 Pages) STMICROELECTRONICS

部件名	STD90N4F3

功能描述	N-channel 40 V, 5.0 mΩ, 80 A, DPAK, TO-220, IPAK, I2PAK STripFET??III Power MOSFET

PDF	16 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 16 page

Electrical characteristics

STD90N4F3, STI90N4F3, STP90N4F3, STU90N4F3

4/16

Doc ID 14212 Rev 3

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc = 125°C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

200

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 40 A for DPAK

5.0

5.8

Ω

VGS= 10 V, ID= 40 A for IPAK,

I²PAK, TO-220

5.4

6.2

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min Typ. Max. Unit

gfs

(1)

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward transconductance

VDS =25 V, ID=40 A

100

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer capacitance

VDS =25 V, f=1 MHz, VGS=0

2200

580

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=20 V, ID = 80 A

VGS =10 V

(see Figure 14)

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