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STP90N4F3 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP90N4F3
功能描述  N-channel 40 V, 5.0 mΩ, 80 A, DPAK, TO-220, IPAK, I2PAK STripFET??III Power MOSFET
PDF  16 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP90N4F3 数据表(HTML) 3 Page - STMicroelectronics

  STP90N4F3 Datasheet HTML 1Page - STMicroelectronics STP90N4F3 Datasheet HTML 2Page - STMicroelectronics STP90N4F3 Datasheet HTML 3Page - STMicroelectronics STP90N4F3 Datasheet HTML 4Page - STMicroelectronics STP90N4F3 Datasheet HTML 5Page - STMicroelectronics STP90N4F3 Datasheet HTML 6Page - STMicroelectronics STP90N4F3 Datasheet HTML 7Page - STMicroelectronics STP90N4F3 Datasheet HTML 8Page - STMicroelectronics STP90N4F3 Datasheet HTML 9Page - STMicroelectronics Next Button
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STD90N4F3, STI90N4F3, STP90N4F3, STU90N4F3
Electrical ratings
Doc ID 14212 Rev 3
3/16
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS=0)
40
V
VGS
Gate-source voltage
± 20
V
ID
(1)
1.
Current limited by package
Drain current (continuous) at TC = 25 °C
80
A
ID
Drain current (continuous) at TC = 100 °C
65
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
320
A
PTOT
Total dissipation at TC = 25 °C
110
W
Derating factor
0.73
W/°C
dv/dt (3)
3.
ISD ≤ 80 A, di/dt ≤ 400A/µs, VDS ≤ V(BR)DSS, Tj ≤ Tjmax
Peak diode recovery voltage slope
8
V/ns
EAS
(4)
4.
Starting Tj = 25°C, ID = 40A, VDD = 30V
Single pulse avalanche energy
400
mJ
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 175
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
TO-220
I²PAK
IPAK
DPAK
Rthj-case
Thermal resistance junction-case max
1.36
°C/W
Rthj-a
Thermal resistance junction-ambient max
62.5
100
°C/W
Rthj-pcb (1)
1.
When mounted on 1inch² FR-4 2Oz Cu board
Thermal resistance junction-ambient max
50
°C/W
Tl
Maximum lead temperature for soldering purpose
300
275
°C



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