STGD18N40LZ datasheet(4/19 Pages) STMICROELECTRONICS

4 / 19 page

Electrical characteristics

STGB18N40LZ, STGD18N40LZ, STGP18N40LZ

4/19

Doc ID 14322 Rev 5

Electrical characteristics

(TJ=25 °C unless otherwise specified)

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

VCES(clamped)

Collector emitter

clamped voltage

(VGE = 0)

IC = 2 mA

TJ = - 40 °C to 150 °C

360

390

420

V(BR)ECS

Emitter collector

break-down voltage

(VGE = 0)

IC = 75 mA

VGE(clamped)

Gate emitter

clamped voltage

IG = ±2 mA

ICES

Collector cut-off

current

(VGE = 0)

VCE = 15 V, TJ = 150 °C

µA

VCE = 200 V, TJ = 150 °C

100

µA

IGES

Gate-emitter

leakage current

(VCE = 0)

VGE = ±10 V

450

625

830

µA

RGE

Gate emitter

resistance

Ω

Gate resistance

1.6

Ω

VGE(th)

Gate threshold

voltage

VGE =VCE, IC = 1 mA, TJ = -40 °C

1.4

VGE =VCE, IC = 1 mA

1.2

1.6

2.3

VGE =VCE, IC = 1 mA, TJ =150 °C

0.7

VCE(sat)

Collector emitter

saturation voltage

VGE = 4.5 V, IC = 10 A

1.35

1.7

VGE = 4.5 V, IC = 10 A,

TJ = 150 °C

1.30

VGE = 3.8 V, IC = 6 A

1.30

Table 5.

Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ. Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

-490

Coes

Output capacitance

Cres

Reverse transfer

capacitance

-5

Gate charge

VCE = 280 V, IC = 10 A,

VGE = 5 V

-29

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