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STHDLS101QTR 数据表(PDF) 13 Page - STMicroelectronics |
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STHDLS101QTR 数据表(HTML) 13 Page - STMicroelectronics |
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13 / 25 page ![]() STHDLS101 Maximum ratings 13/25 5 Maximum ratings Stressing the device above the rating listed in the “Absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute maximum rating conditions for extended periods may affect device reliability. Table 5. Absolute maximum ratings Symbol Parameter Value Unit VCC Supply voltage to ground potential -0.5 to +4.0 V VI DC input voltage (TMDS and PCIe ports) -0.5 to +4.0 V Control pins -0.5 to +4.0 V SDA_SINK, SCL_SINK, HPD_SINK pins -0.5 to +6 V IO DC output current 120 mA PD Power dissipation 1 W TSTG Storage temperature -65 to +150 °C TL Lead temperature (10 sec) 300 °C VESD Electrostatic discharge voltage on IOs(1) 1. In accordance with the MIL standard 883 method 3015 Human body model ±6 kV Table 6. Thermal data Symbol Parameter QFN-48 Unit θ JA Junction-ambient thermal coefficient 48 °C/W |
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