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BCR166F 数据表(PDF) 1 Page - Infineon Technologies AG |
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BCR166F 数据表(HTML) 1 Page - Infineon Technologies AG |
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1 / 10 page ![]() 2007-09-17 1 BCR166... PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R 1 = 4.7 kΩ , R2 = 47 kΩ ) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BCR166/F BCR166W EHA07183 3 2 1 C E B R1 R 2 Type Marking Pin Configuration Package BCR166 BCR166F BCR166W WTs WTs WTs 1=B 1=B 1=B 2=E 2=E 2=E 3=C 3=C 3=C - - - - - - - - - SOT23 TSFP-3 SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Input forward voltage Vi(fwd) 30 Input reverse voltage Vi(rev) 5 Collector current IC 100 mA Total power dissipation- BCR166, TS ≤ 102°C BCR166F, TS ≤ 128°C BCR166W, TS ≤ 124°C Ptot 200 250 250 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 1Pb-containing package may be available upon special request |
类似零件编号 - BCR166F |
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类似说明 - BCR166F |
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