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IPT12Q06-CEF 数据表(PDF) 1 Page - IP SEMICONDUCTOR CO., LTD. |
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IPT12Q06-CEF 数据表(HTML) 1 Page - IP SEMICONDUCTOR CO., LTD. |
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1 / 4 page ![]() IP Semiconductor Co., Ltd. IPT12Q06-xxF High current density due to double mesa technology; SIPOS and Glass Passivation. IPT12Q06-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. The IPT12Q06-xxF(Insulated version) series are isolated internally, they provided a 2500V RMS isolation voltage from all three terminals to external heatsink.. Symbol Value Unit IT(RMS) 12 A VDRM / VRRM 600 V VTM ≤ 1.55 V MAIN FEATURES Parameter Symbol Value Unit Storage Junction Temperature Range Operating Junction Temperature Range Tstg Tj -40 to +150 -40 to +125 ℃ Repetitive Peak Off-state Voltage Tj = 25℃ Repetitive Peak Reverse Voltage VDRM VRRM 600 600 V Non Repetitive Peak Off-state Voltage Tj = 25℃ Non Repetitive Peak Reverse Voltage VDSM VRSM 700 700 V RMS on –state current Tc = 79 ℃ (Full sine wave) IT(RMS) 12 A Non repetitive surge peak on –state Current f = 60Hz t = 16.7ms (full cycle, Tj = 25℃) f = 50 Hz t = 20ms ITSM 126 120 A I²t Value for fusing tp = 10ms I²t 78 A²s Critical Rate of rise of on-state current IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃ dI / dt 50 A/us Peak gate current tp = 20us, Tj = 125 ℃ IGM 4 A Average gate power dissipation Tj = 125 ℃ PG(AV) 1 W ABSOLUTE MAXIMUM RATINGS 1 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com |
类似零件编号 - IPT12Q06-CEF |
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类似说明 - IPT12Q06-CEF |
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