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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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FS75R12W2T4 数据表(PDF) 2 Page - Infineon Technologies AG |
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FS75R12W2T4 数据表(HTML) 2 Page - Infineon Technologies AG |
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2 / 9 page  2 Technische Information / technical information FS75R12W2T4 IGBT-Module IGBT-modules prepared by: DK approved by: MB date of publication: 2009-10-30 revision: 2.3 Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values Kollektor-Emitter-Sperrspannung collector-emitter voltage TÝÎ = 25°C V†Š» 1200 V Kollektor-Dauergleichstrom DC-collector current T† = 95°C, TÝÎ = 175°C T† = 25°C, TÝÎ = 175°C I† ÒÓÑ I† 75 107 A A Periodischer Kollektor Spitzenstrom repetitive peak collector current t« = 1 ms I†ç¢ 150 A Gesamt-Verlustleistung total power dissipation T† = 25°C, TÝÎ = 175°C PÚÓÚ 375 W Gate-Emitter-Spitzenspannung gate-emitter peak voltage V•Š» +/-20 V Charakteristische Werte / characteristic values min. typ. max. Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage I† = 75 A, V•Š = 15 V I† = 75 A, V•Š = 15 V I† = 75 A, V•Š = 15 V V†Š ÙÈÚ 1,85 2,15 2,25 2,15 V V V TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C Gate-Schwellenspannung gate threshold voltage I† = 2,40 mA, V†Š = V•Š, TÝÎ = 25°C V•ŠÚÌ 5,2 5,8 6,4 V Gateladung gate charge V•Š = -15 V ... +15 V Q• 0,57 C Interner Gatewiderstand internal gate resistor TÝÎ = 25°C R•ÍÒÚ 10  Eingangskapazität input capacitance f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V CÍþÙ 4,30 nF Rückwirkungskapazität reverse transfer capacitance f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V CØþÙ 0,16 nF Kollektor-Emitter Reststrom collector-emitter cut-off current V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C I†Š» 1,0 mA Gate-Emitter Reststrom gate-emitter leakage current V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C I•Š» 100 nA Einschaltverzögerungszeit (ind. Last) turn-on delay time (inductive load) I† = 75 A, V†Š = 600 V V•Š = ±15 V R•ÓÒ = 2,2  tÁ ÓÒ 0,13 0,15 0,15 s s s TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C Anstiegszeit (induktive Last) rise time (inductive load) I† = 75 A, V†Š = 600 V V•Š = ±15 V R•ÓÒ = 2,2  tØ 0,02 0,03 0,035 s s s TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C Abschaltverzögerungszeit (ind. Last) turn-off delay time (inductive load) I† = 75 A, V†Š = 600 V V•Š = ±15 V R•ÓËË = 2,2  tÁ ÓËË 0,30 0,38 0,40 s s s TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C Fallzeit (induktive Last) fall time (inductive load) I† = 75 A, V†Š = 600 V V•Š = ±15 V R•ÓËË = 2,2  tË 0,045 0,08 0,09 s s s TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse I† = 75 A, V†Š = 600 V, L» = 25 nH V•Š = ±15 V, di/dt = 2800 A/ s (TÝÎ=150°C) R•ÓÒ = 2,2  EÓÒ 4,70 7,20 8,00 mJ mJ mJ TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C Abschaltverlustenergie pro Puls turn-off energy loss per pulse I† = 75 A, V†Š = 600 V, L» = 25 nH V•Š = ±15 V, du/dt = 3800 V/ s (TÝÎ=150°C) R•ÓËË = 2,2  EÓËË 3,90 6,10 6,40 mJ mJ mJ TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C Kurzschlussverhalten SC data V•Š ù 15 V, V†† = 800 V V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt I»† 270 A TÝÎ = 150°C t« ù 10 s, Innerer Wärmewiderstand thermal resistance, junction to case pro IGBT / per IGBT RÚÌœ† 0,35 0,40 K/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro IGBT / per IGBT ð«ÈÙÚþ = 1 W/(m·K) / ðÃØþÈÙþ = 1 W/(m·K) RÚ̆™ 0,60 K/W |
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