TLE6281G datasheet(9/15 Pages) INFINEON

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Data Sheet TLE 6281G

Data Sheet

Rev 2.3 2007-01-11

output stage the ER1 is pulled down. This shut down can be caused by undervoltage or

short circuit. In this condition ER2 indicates the reason for the shut down.

Condition of

ER1 pin

Condition of

ER2 pin

Function

no errors

overtemperature warning of driver IC

Shut down of any output stage caused by short circuit

Shut down of any output stage caused by undervoltage

Recommended Start-up procedure

The following procedure is recommended whenever the Driver IC is powered up:

• Disable the Driver IC via DT/DIS pin

• Wait until the bootstrap capacitors CBx are charged (the waiting time depends on

application conditions, e.g. CBx and RBx)

• Enable the Driver IC via DT/DIS pin

• Start the operation by applying the desired pulse patterns. Do not apply any pulse pat-

terns to the PWM or DIR pin, before the CBx capacitors are charged up.

Shut down of the driver

A shut down can be caused by undervoltage or short circuit. A short circuit will shut down

only the affected Mosfet until a reset of the error register by a disable of the driver occurs. A

shut down due to short circuit will occur only when the Short Circuit criteria VDS(SCP) is met for

a duration equal to or longer than the Short Circuit filter time tSCP(off). Yet, the exposure to or

above VDS(SCP) is not counted or accumulated. Hence, repetitive Short Circuit conditions

shorter than tscp(off) will not result in a shut down of the affected MOSFET.

An undervoltage shut down shuts only the affected output down. The affected output will

auto restart after the undervoltage situation is over.

Operation at Vs<12V

If Vs<11.5V the gate voltage will not reach 10V. It will reach approx Vs-1.5V, dependent on

duty cyle, bootstrap capacitor, total gate charge of the external Mosfet and switching fre-

quency.

Operation at different voltages for Vs, DH1 and DH2

If DH1 and DH2 are used with a voltage higher than Vs, a duty cycle of 100% can not be

guaranteed. In this case the driver is acting like a normal driver IC based on the bootstrap

principle. This means that after a maximum “On” time of the highside switch of more than

1ms a refresh pulse to charge the bootstrap capacitor of about 1µs is needed to avoid un-

dervoltage lock out of this output stage.

Operation at extreme duty cycle:

The integrated charge pump allows an operation at 100% duty cycle. The charge pump is

strong enough to replace leakage currents during “on”-phase of the highside switch. The

gate charge for fast switching of the highside switches is supplied by the bootstrap capaci-

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