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AD8376ACPZ-R7 数据表(PDF) 12 Page - Analog Devices |
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AD8376ACPZ-R7 数据表(HTML) 12 Page - Analog Devices |
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12 / 24 page ![]() AD8376 Rev. A | Page 12 of 24 CIRCUIT DESCRIPTION BASIC STRUCTURE The AD8376 is a dual differential variable gain amplifier with each amplifier consisting of a 150 Ω digitally controlled passive attenuator followed by a highly linear transconductance amplifier. gm CORE AMP MUX BUFFERS 1/2 AD8376 A0 TO A4 DIGITAL SELECT ATTENUATOR IP+ VCM IP– OP+ OP– Figure 33. Simplified Schematic Input System The dc voltage level at the inputs of the AD8376 is set by an internal voltage reference circuit to about 2 V. This reference is accessible at VCMA and VCMB and can be used to source or sink 100 μA. For cases where a common-mode signal is applied to the inputs, such as in a single-ended application, an external capacitor between VCMA/VCMB and ground is required. The capacitor improves the linearity performance of the part in this mode. This capacitor should be sized to provide a reactance of 10 Ω or less at the lowest frequency of operation. If the applied common-mode signal is dc, its amplitude should be limited to 0.25 V from VCMA/VCMB (VCMA or VCMB ± 0.25 V). Each device can be powered down by pulling the ENBA or ENBB pin down to below 0.8 V. In the powered down mode, the total current reduces to 3 mA (typical). The dc level at the inputs and at VCMA/VCMB remains at about 2 V, regardless of the state of the ENBA of ENBB pin. Output Amplifier The gain is based on a 150 Ω differential load and varies as RL is changed per the following equations: Voltage Gain = 20 × (log(RL/150) + 1) and Power Gain = 10 × (log(RL/150) + 2) The dependency of the gain on the load is due to the open- collector architecture of the output stage. The dc current to the outputs of each amplifier is supplied through two external chokes. The inductance of the chokes and the resistance of the load determine the low frequency pole of the amplifier. The parasitic capacitance of the chokes adds to the output capacitance of the part. This total capacitance in parallel with the load resistance sets the high frequency pole of the device. Generally, the larger the inductance of the choke, the higher its parasitic capacitance. Therefore, the value and type of the choke should be chosen keeping this trade-off in mind. For operation frequency of 15 MHz to 700 MHz driving a 150 Ω load, 1 μH chokes with SRF of 160 MHz or higher are recommended (such as 0805LS-102XJBB from Coilcraft). The supply current of each amplifier consists of about 50 mA through the VCC pin and 80 mA through the two chokes combined. The latter increases with temperature at about 2.5 mA per 10°C. Each amplifier has two output pins for each polarity, and they are oriented in an alternating fashion. When designing the board, care should be taken to minimize the parasitic capaci- tance due to the routing that connects the corresponding outputs together. A good practice is to avoid any ground or power plane under this routing region and under the chokes to minimize the parasitic capacitance. Gain Control Two independent 5-bit binary codes change each attenuator setting in 1 dB steps such that the gain of each amplifier changes from +20 dB (Code 0) to −4 dB (Code 24 and higher). The noise figure of each amplifier is about 8 dB at maximum gain setting, and it increases as the gain is reduced. The increase in noise figure is equal to the reduction in gain. The linearity of the part measured at the output is first-order independent of the gain setting. From 0 dB to 20 dB gain, OIP3 is approximately 50 dBm into 150 Ω load at 140 MHz (3 dBm per tone). At gain settings below 0 dB, it drops to approximately 45 dBm. |
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