2

RF Device Data

Freescale Semiconductor

MMG20271HT1

Characteristic

Symbol

Min

Typ

Max

Unit

Small--Signal Gain (S21)

13.9

16

—

dB

Input Return Loss (S11)

IRL

—

--14

—

dB

Output Return Loss (S22)

ORL

—

--22

—

dB

Power Output @ 1dB Compression

P1dB

—

27.5

—

dBm

Third Order Input Intercept Point

IIP3

—

26

—

dBm

Third Order Output Intercept Point

OIP3

—

42

—

dBm

Reverse Isolation (S12)

|S12|

—

--23

—

dB

Noise Figure

NF

—

1.7

—

dB

148

180

227

mA

—

5

—

V

1. For reliable operation, the junction temperature should not exceed 150°C.

Table 5. Functional Pin Description

Name

Pin Number

Description

3

to ground internal to the package. No external blocking is

necessary unless externally applied DC is present on

the trace.

8, 9

RF output for the power amplifier. This pin is DC coupled

and requires a DC blocking capacitor.

12

Bias voltage and current adjust pin.

GND

Backside

Center Metal

The center metal base of the QFN package provides

both DC and RF ground as well as the heat sink contact

for the IC.

1. The RF input has a DC path to ground and therefore may require an external

decoupling capacitor.

Table 6. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD 22--A114)

1B (Minimum)

Machine Model (per EIA/JESD 22--A115)

A (Minimum)

Charge Device Model (per JESD 22--C101)

IV (Minimum)

Table 7. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

1

260

°C

Figure 1. Pin Connections

(Top View)

19

28

37

12

11

10

45

6

N.C.

N.C.

N.C.

N.C.

N.C.

N.C.

N.C.

N.C.

GND