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TLE7269G 数据表(PDF) 21 Page - Infineon Technologies AG

部件名 TLE7269G
功能描述  Twin LIN Transceiver
PDF  34 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

TLE7269G 数据表(HTML) 21 Page - Infineon Technologies AG

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Data Sheet
21
Rev. 1.2, 2007-11-13
TLE7269G
Electrical Characteristics
6
Electrical Characteristics
6.1
Functional Device Characteristics
Table 7
Electrical Characteristics
7.0 V < VS < 27 V; RL = 500 Ω; Vio = 5V; -40 °C < Tj < 125 °C; all voltages with respect to ground; positive current
flowing into pin; unless otherwise specified.
Pos.
Parameter
Symbol
Limit Values
Unit Remarks
Min.
Typ.
Max.
Current Consumption
6.1.1
Current consumption at
VS(both channels recessive)
IS,rec
0.5
1.6
3.0
mA
recessive state, without RL;
VS = 13.5 V
VTxD = Vio
6.1.2
Current consumption normal
mode at Vio
IVIO,norm
10
50
µA
Normal Operation mode.
VIO=5 V
6.1.3
Current consumption
at VS (both channels
dominant)
IS,dom
3
5.0
mA
dominant state, without RL;
VS = 13.5 V;
VTxD = 0 V
6.1.4
Current consumption
in sleep mode at Vio
IVIO,Sleep
1
10
µA
Sleep mode, VIO=5 V
6.1.5
Current consumption
in sleep mode
IS,Sleep
–7
12
µA
Sleep mode,
VS = 18 V;
VBUS= VWK = VS;
6.1.6
Current consumption in sleep
mode
IS,Sleep,typ
5
10
µA
Sleep mode, Tj < 85 °C;
VS = 13.5 V;
VWK= VS= VBUS;
Under Voltage Detection
6.1.7
Blocking under voltage
detection at
V
S
(
V
S on the falling edge)
Vs,UV,BLK
3.5
5
V
Communication blocked
no reset (see Figure 11)
6.1.8
Power ON under voltage
detection at
V
S
Vs,UV,PON
3.5
V
Device reset to Stand-By-
Mode 1)(see Figure 11)
6.1.9
Under voltage detection at
V
IO VIO,UV
1.5
2.5
3
V
Communication blocked
no reset (see Figure 11)
6.1.10 Under voltage blanking time
tblankUV
–5
µs
1)
Receiver Outputs: RxD1, RxD2
6.1.11 HIGH level output current
IRD,H
–10
-4
-2
mA
VRD = 0.8 × VIO
6.1.12 LOW level output current
IRD,L
24
10
mA
VRD = 0.2 × VIO



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