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SILICON POWER TRANSISTOR

2SC4331,4331-Z

NPN SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

DATA SHEET

2002

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Document No. D16136EJ3V0DS00 (3rd edition)

Date Published January 2007 NS CP(K)

Printed in Japan

The 2SC4331 and 2SC4331-Z are mold power transistors developed for

high-speed switching and features a very low collector-to-emitter saturation

voltage.

This transistor is ideal for use in switching regulators, DC/DC converters,

motor drivers, solenoid drivers, and other low-voltage power supply devices,

as well as for high-current switching.

FEATURES

• Available for high-current control in small dimension

• Z type is a lead-processed product and is deal for mounting a hybrid IC.

• Low collector saturation voltage

• Fast switching speed:

≤ 0.4

• High DC current gain and excellent linearity

°C)

Collector to Base Voltage

150

V

Collector to Emitter Voltage

100

V

Emitter to Base Voltage

7.0

V

Collector Current (DC)

5.0

A

Collector Current (pulse)

Note 1

10

A

Base Current (DC)

2.5

A

°C)

15

W

°C)

1.0

W

Junction Temperature

150

°C

Storage Temperature

−55 to +150

°C

Notes 1. PW

≤ 10 ms, duty cycle ≤ 50%

2. Printing board mounted

3. 7.5 cm

PACKAGE DRAWING (Unit: mm)

2

13

6.5 ±0.2

5.0 ±0.2

4

2.3

2.3

0.5 ±0.1

2.3 ±0.2

1.1 ±0.2

+0.2

+0.2

12 3

4

6.5 ±0.2

4.4 ±0.2

5.0 ±0.2

0.5 ±0.1

0.5 ±0.1

2.3 ±0.2

0.5 ±0.1

Note

Note

0.15 ±0.15

2.3 ±0.3

2.3 ±0.3

TO-252 (MP-3Z)

Electrode Connectio

1. Base

2. Collector

3. Emitter

4. Collector Fin

Note The depth of notch at the top of the fin is

from 0 to 0.2 mm.

TO-251 (MP-3)

<R>